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نام مجله: IEEE Transactions on Electron Devices

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موارد یافت شده: 6

1 - Armchair Graphene Nanoribbon Gate-Controllable RTD With Boron Nitride Barriers (چکیده)
2 - Design and AC Modeling of a Bipolar GNR-h-BN RTD With Enhanced Tunneling Properties and High Robustness to Edge Defects (چکیده)
3 - Quasi-Schottky-Barrier UTBB SOI MOSFET for Low-Power Robust SRAMs (چکیده)
4 - Restraining IPMC Back Relaxation in Large Bending Displacements: Applying Non-Feedback Local Gaussian Disturbance by Patterned Electrodes (چکیده)
5 - A 2-D Analytical Model for Double-Gate Tunnel FETs (چکیده)
6 - Small-Signal Characterization of SiGe-HBT<tex>$f_T$</tex>-Doubler up to 120 GHz (چکیده)